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MEASUREMENT OF THE BANDGAP OF GexSi1−x/Si STRAINED-LAYER HETEROSTRUCTURES

Published online by Cambridge University Press:  28 February 2011

D. V. LANG ,
R. PEOPLE ,
J. C. BEAN  and
A. M. SERGENT
D. V. LANG
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. PEOPLE
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. C. BEAN
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. M. SERGENT
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We have used photocurrent spectroscopy to measure the optical absorption spectra of coherently strained layers of GexSi1−x grown on {001} Si by molecular beam epitaxy. A dramatic lowering of the indirect bandgap, relative to that of unstrained bulk Ge-Si alloys, is observed. Our results for 0 < × < 0.7 are in remarkably good agreement with recent calculations of the effects of misfit strain on the band edges of coherently strained Ge-Si heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 359
Copyright
Copyright © Materials Research Society 1986

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