Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-26T19:28:48.787Z Has data issue: false hasContentIssue false
  • English
  • Français

Mechanical Properties and Morphology of Polycrystalline 3C-SiC Films Deposited on Si and SiO2 by LPCVD

Published online by Cambridge University Press:  01 February 2011

Xiao-an Fu ,
Jeremy Dunning ,
Srihari Rajgopal ,
Ming Zhang ,
Christian A. Zorman  and
Mehran Mehregany
Xiao-an Fu
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106, USA
Jeremy Dunning
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106, USA
Srihari Rajgopal
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106, USA
Ming Zhang
Affiliation:
Department of Material Science and Engineering, Case Western Reserve University, Cleveland, Ohio 44106, USA
Christian A. Zorman
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106, USA
Mehran Mehregany
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106, USA
Get access

Abstract

Poly-SiC films were deposited on Si and SiO2 substrates in a high-throughput, low pressure chemical vapor deposition (LPCVD) furnace using dichlorosilane (DCS) and acetylene precursors. The deposition temperature and pressure were fixed at 900°C and 2 Torr, respectively, while the flow rate of DCS was varied between 18 and 54 sccm. Poly-SiC deposition rates on both Si and SiO2 were nearly identical to each other and increased as a function of DCS flow rate. Consistent with both substrate materials, the following observations were made. A slope change of the deposition rate versus DCS flow rate was observed around a DCS flow rate of 35 sccm. Residual stress varied with respect to the deposition rate, with tensile stresses occurring at lower deposition rates and compressive stresses at higher deposition rates. The tensile-to-compressive stress transition corresponded to the slope change of the deposition rate versus DCS flow rate. The surface morphology consisted of pyramidal grains, as observed under an SEM. TEM analysis for poly-SiC films grown on Si substrates showed that microstructural differences exist for poly-SiC films having tensile and compressive stresses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U11.3
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mehregany, M., Zorman, C.A., Roy, S., Fleischman, A.J., Wu, C.H., and Rajan, N., Int. Mat. Rev., 45 85–108 (2000).Google Scholar
2. Sarro, P.M. Sensors & Actuators 82, 210–218 (2000).Google Scholar
3. Mehregany, M., Zorman, C.A., Thin Solid Films, 355–356, 518–524 (1999).Google Scholar
4. Zorman, C.A., Rajgopal, S., Fu, X.A., Jezeski, R., Melzak, J., Mehregany, M., Electrochem. Solid State Lett., 5, G99 (2002).Google Scholar
5. Wu, C.H., Zorman, C.A., and Mehregany, M., Thin Solid Films, 355–356, 179 (1999).Google Scholar
6. Fu, X.A., Dunning, J., Zorman, C.A., and Mehregany, M., to be published on Mater. Sci. Forum (2004).Google Scholar
7. Dunning, J., Fu, X.A., Rajgopal, S., Mehregany, M., and Zorman, C.A., to be published on Mater. Sci. Forum (2004).Google Scholar
8. Krulevitch, P., Johnson, G. C., Howe, R.T., Mater. Res. Soc Symp. Proc. 276, 79 (1992).Google Scholar
9. Krulevitch, P., Nguyen, T.D., Johnson, G. C., Howe, R.T., Wenk, H.R., Gronsky, R., Mater. Res. Soc Symp. Proc. 202, 167 (1991).Google Scholar
10. Maier-Schneider, D., Koprululu, A., Ballhausen Holm, S., Obermeier, E., J. Micromech. Microeng., 6, 436 (1996).Google Scholar
11. Yang, J., Kahn, H., He, A.Q., Phillips, S. M., and Heuer, A.H., IEEE J. MEMS, 9, 485 (2000).Google Scholar
12. Hurtos, E., and Rodriguez-Viejo, J., J. Appl. Phys. 87, 1748 (2000).Google Scholar