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Mechanical Properties of the GaAs/Si [001] Interface by X-rays Hybrid Multiple Diffraction

Published online by Cambridge University Press:  15 February 2011

S. L. Morelhão ,
L.P. Cardoso  and
M.M.G. de Carvalho
S. L. Morelhão
Affiliation:
IFGW/UNICAMP, CP 6165, 13083-970, Campinas, SP, Brazil
L.P. Cardoso
Affiliation:
IFGW/UNICAMP, CP 6165, 13083-970, Campinas, SP, Brazil
M.M.G. de Carvalho
Affiliation:
IFGW/UNICAMP, CP 6165, 13083-970, Campinas, SP, Brazil
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Abstract

In this work, the directions of the secondary beams which are scattered by each mosaic block within an epitaxial layer allow to explain the position and profile of the LS hybrid multiple diffraction peak in the substrate Renninger Scan (RS). Furthermore, by choosing a secondary beam diffracted almost parallel to the interface, the LS peak is able to provide information even for thin (500Å) layers. The position of the LS peak in the substrate RS of the GaAs layers grown by VCE on Si(001) provides the a║ values necessary to analize the layer stress state. As an external bending moment is applied on the sample to compensate the stress steming from the difference in thermal expansion coefficients a split of both epilayer and buffer layer LS peaks can be observed. This split also indicates the degree of cohesion between these two layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 439
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Isherwood, B.J., Brown, B.R., and Halliwell, M.A.G., J. Crystal Growth 54, 449 (1981)Google Scholar
2 Morelhão, S.L., Cardoso, L.P., Sasaki, J.M., and Sach, A.C., Defect Control in Semiconductors, edited by Sumino, K. (Elsevier, North Holland, 1990) p. 1117 CrossRefGoogle Scholar
3 Morelhão, S.L. and Cardoso, L.P., J. Crystal Growth, 110, 543 (1991)Google Scholar
4 Morelhão, S.L., Cardoso, L.P., Sasaki, J.M. and de Carvalho, M.M.G., J. Appl. Phys., 70 (5), 2589 (1991)Google Scholar
5 Morelhão, S.L. and Cardoso, L.P., Mat. Res. Soc. Symp.Proc, 262, 175 (1992)Google Scholar
6 Morelhão, S.L. and Cardoso, L.P., to appear in J. Appl. Phys. 73 (9), (1993)Google Scholar
7 Cotta, M.A. and de Carvalho, M.M.G., J. Appl. Phys. 69 (2), 732 (1991)CrossRefGoogle Scholar
8 Stolz, W., Horikoshi, Y. and Naganuma, M., Jpn. J. Appl. Phys. 27 (6), L1140 (1988)Google Scholar
9 Chu, S.N.G., Macrander, A.T., Strege, K.E. and Johnston, WD. Jr., J. Appl. Phys., 57 (2), 249 (1985)CrossRefGoogle Scholar