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A Mechanism for the Removal Of Dislocations in SOI Compliant Substrate Systems

Published online by Cambridge University Press:  10 February 2011

R. V. Kukta  and
L. B. Freund
R. V. Kukta
Affiliation:
Division of Engineering and Applied Sciences, California Institute of Technology, Pasadena, CA 91125
L. B. Freund
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
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Abstract

It is demonstrated that the time required for strain transference during the postgrowth anneal of a SOI compliant substrate system is much too long to explain the observed reduction in dislocation density in the resulting microstructure. A mechanism by which misfit dislocation segments are drawn out of the system through viscous dissipation in the bonding layer is proposed and demonstrated to be consistent with observation. The mechanism is mtodeled in the context of elastic dislocation theory and linear viscoelasticity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 3
Copyright
Copyright © Materials Research Society 1999

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