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Mechanism of High Rate a-Si:H Deposition in a VHF Plasma

Published online by Cambridge University Press:  01 January 1993

M. Heintze ,
R. Zedlitz  and
G.H. Bauer
M. Heintze
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, FRG
R. Zedlitz
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, FRG
G.H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart 80, FRG
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Abstract

Very high frequency (VHF) glow discharges are employed for high rate a-Si:H deposition while maintaining good optoelectronic materials properties. A more efficient radical generation, either due to higher electron densities or an enhanced high energy electron tail is generally assumed as the mechanism. We have investigated a VHF a-Si:H deposition plasma between 40 and 250MHz by optical emission spectroscopy (OES), mass spectroscopy (MS), ion energy measurements and electrical impedance analysis. The present study shows that the increase of the deposition rate with frequency is essentially due to an enhanced ion flux to the growth surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 49
Copyright
Copyright © Materials Research Society 1993

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References

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