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Mechanism of the Slow-Down of the Silicon Etch Rate by a Fluorocarbon Overlayer in CF4/H2 Reactive Ion Etching of Silicon

Published online by Cambridge University Press:  25 February 2011

Gottlieb S. Oehrlein ,
Steve W. Robey  and
Mark A. Jaso
Gottlieb S. Oehrlein
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598, USA
Steve W. Robey
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598, USA
Mark A. Jaso
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y. 10598, USA
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Abstract

We have utilized an ultrahigh vacuum surface analysis system interfaced via a load-lock to a flexible diode dry etching apparatus to study vacuum transferred CF4/H2 reactive ion etched silicon surfaces by X-ray photoemission spectroscopy (XPS). From the observation and analysis of silicon-fluorine bonding underneath the fluorocarbon film and the dependence of the abundance of fluorosilyl species on the thickness of the fluorocarbon overlayer, the role of the fluorocarbon film in the slow-down of the Si etch rate has been elucidated: The role of the fluorocarbon film is to “protect” the Si surface from attack of fluorine, rather than prevent the escape of SiF4 etch product.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 98: Symposium K – Plasma Processing and Synthesis of Materials II , 1987 , 229
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Heinecke, R. A. H., Solid State Electronics 18 1146 (1975).Google Scholar
2. Ephrath, L. M., J. Electrochem. Soc. 126 1419 (1979); L. M. Ephrath and E. J. Petrillo, J. Electrochem. Soc. 129, 2282 (1982).Google Scholar
3. Coburn, J. W., J. Appl. Phys., 5, 5210 (1979).Google Scholar
4. Oehrlein, G. S. and Williams, H. L., J. Appl. Phys. (to be published July 1987); For a description of the structure of CF4/H2 reactive ion etched Si surfaces, see G. S. Oehrlein and Y. H. Lee, J. Vac. Sci.&Tech. (to be published 1987).Google Scholar
5. Oehrlein, G. S., J. Appl. Phys. 5 3053 (1986).Google Scholar
6. McFeely, F. R., Morar, J. F., Shinn, N. D., Landgren, G., and Himpsel, F. J., Phys. Rev. B 30, 764 (1984); F. R. McFeely, J. F. Morar, and F. J. Himpsel, Surface Science 165, 277 (1986).Google Scholar
7. Gruntz, K. J., Ley, L., and Johnson, R. L., Phys. Rev. B 24, 2069 (1981).Google Scholar
8. Coyle, G. J. and Oehrlein, G. S., Appl. Surf. Science 25, 423 (1986); G. S. Oehrlein, G. J. Coyle, J. G. Clabes, and Y. H. Lee, Surf. Interf. Analysis 9. 275 (1986).Google Scholar
9. Taubenblatt, M. A. and Helms, C. R., J. Appl. Phys. 59, 1992 (1986).Google Scholar
10. Ebel, M. F., J. Electron Spectroscopy 14, 287 (1978).Google Scholar
11. Oehrlein, G. S., Reimanis, I., and Lee, Y. H., Thin Solid Films 143, 269 (1986).Google Scholar