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Mechanisms of Al Self- and Al-Substituting Solute Diffusion in Ni3Al

Published online by Cambridge University Press:  10 February 2011

St. Frank ,
S. Divinski  and
Chr. Herzig
St. Frank
Affiliation:
Institut für Metallforschung, Westfälische-Wilhelms Universität, D-48149 Munster, Germany
S. Divinski
Affiliation:
Institut für Metallforschung, Westfälische-Wilhelms Universität, D-48149 Munster, Germany
Chr. Herzig
Affiliation:
Institut für Metallforschung, Westfälische-Wilhelms Universität, D-48149 Munster, Germany
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Abstract

Diffusion of the Al-substituting elements Ga, Ge, Ti and Nb has been investigated in Ni3Al single crystals by the secondary ion mass spectrometry (SIMS). A model for the minority component diffusion by anti-structure defects has been suggested for the Ll2 structure. It involves both nearest neighbor jumps of the solute atoms on the Ni sublattice as anti-structure atoms and the formation of so-called anti-structure bridges which correspond to jumps between different sublattices. The model under consideration was shown to agree with the experimental data on the Al-substituting solute diffusion (X = Ga, Ge, Ti, Nb) in Ni3Al and it allows to explain also the observed ratio of the diffusivities DNi/DX, which may be higher and/or lower than unity in dependence on the solute and temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 171
Copyright
Copyright © Materials Research Society 1998

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References

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