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Metamorphic GaInP-GaInAs Layers for Photovoltaic Applications

Published online by Cambridge University Press:  01 February 2011

A. W. Bett ,
C. Baur ,
F. Dimroth  and
J. Schöne
A. W. Bett
Affiliation:
Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany, andreas.bett@ise.fraunhofer.de
C. Baur
Affiliation:
Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany, andreas.bett@ise.fraunhofer.de
F. Dimroth
Affiliation:
Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany, andreas.bett@ise.fraunhofer.de
J. Schöne
Affiliation:
Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany, andreas.bett@ise.fraunhofer.de Technische Fakultät der Christian-Albrechts-Universität zu Kiel, Kaiserstrasse 2, 24143 Kiel
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Abstract

GaxIn1−xAs and GayIn1−yP layers were grown lattice mismatched to GaAs and Ge by low-pressure metal organic vapor phase epitaxy (LP-MOPVE). These materials are very promising for further increasing the efficiency of monolithic triple-junction solar cells. Different buffer layer structures were realized. Transmission electron microscopy and x-ray diffraction analysis were used to characterize the quality of the crystal. Both linear and step-graded buffers in GaxIn1−xAs were successfully used under an active solar cell structure. GayIn1−yP as buffer material showed a worse performance. Excellent solar cell performance was achieved for lattice mismatched single-, dual- and triple-junction solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L6.4
Copyright
Copyright © Materials Research Society 2005

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References

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