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Metastability in SiGe/Si Strained-Layer Structures

Published online by Cambridge University Press:  28 February 2011

Brian W. Dodson
Brian W. Dodson*
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185
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Abstract

The physics governing growth and stability properties in SiGe/Si strainedlayer structures is reviewed. The role of metastability in crystal growth is outlined. Experimental data on stability limits and rates of strain relaxation are examined. We conclude that essentially all observations on relaxation of semiconductor strained-layer structures can be explained by standard models of plastic deformation adapted to the special conditions controlling dislocation dynamics in these structures.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 491
Copyright
Copyright © Materials Research Society 1988

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