Hostname: page-component-cb9f654ff-nr592 Total loading time: 0 Render date: 2025-08-23T01:21:58.816Z Has data issue: false hasContentIssue false
  • English
  • Français

The Microchemistry of the SiO2/Silicon Interface

Published online by Cambridge University Press:  28 February 2011

C.R. M-Grovenor
C.R. M-Grovenor*
Affiliation:
Department of Metallurgy and Science of Materials, University of Oxford, Parks Road, Oxford OX1 3PH.
Get access

Abstract

This paper deals with the chemical microanalysis of the Si02/si terface by Pulsed Laser Atom Probe (PLAP). The PLAP technique is briefly described, emphasizing its unique advantages in the study of the chemistry of interfaces. A transition oxide layer of stoichiometry SiO has been identified by PLAP analyses of the Si02/S' interface in thermal and anodic oxides. Simple models of the structure of the interface incorporating this SiO layer are presented, and the possible role of this layer during oxidation is discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 301
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1.Helms, C.R., Johnson, N.M., Schwarz, S.A., Spicer, W.E., J. Appl. Phys. 50, 7007 (1979).Google Scholar
2.Wager, J.F., Wilmsen, C.W., J. Appl. Phys. 50, 874 (1979).Google Scholar
3.Grunthaner, F.J., Grunthaner, P.J., Vasquez, R.P., Lewis, B.F., Maserjian, J., Madhukar, A., J. Vac. Sci. Technol. 16, 1443 (1979).Google Scholar
4.Hattori, T., Suzuki, T., Appl. Phys. Lett. 43, 47 (1983).Google Scholar
5.Sigmon, T.W., Chu, W.K., Lugujjo, E., Mayer, J.W., Appl. Phys. Lett. 24, 105 (1974).Google Scholar
6.Feldman, L.C., Silverman, P.J., Williams, J.S., Jackman, T.E., Stensgaard, I., Phys. Rev. Lett. 41, 1396 (1978).Google Scholar
7.Aspnes, D.E., Theeten, J.B., J. Electrochem. Soc. 127, 1359 (1980).Google Scholar
8.Krivanek, O.L., Sheng, T.T., Tsui, D.C., Appl. Phys. Lett. 32, 407 (1978).Google Scholar
9.d'Anterroches, C., J. Microsc. Spectrosc. Elect. 9, 147 (1984).Google Scholar
10.Hahn, P.O., Henzler, M., J. Vac. Sci. Technol. A 2, 574 (1984).Google Scholar
11.Agius, B., Rigo, S., Rochet, F., Froment, M., Maillot, C., Roulet, H., Dufour, G., Appl. Phys. Lett. 44, 48 (1984).Google Scholar
12.Muller, E.W., Panitz, J.A., McLane, S.B., Rev. Sci. Instrum. 39, 83 (1968).Google Scholar
13.Kellogg, G.L., Tsong, T.T., J. Appl. Phys. 51, 1184 (1980).Google Scholar
14.Cerezo, A., Grovenor, C.R.M., Smith, G.D.W., J. Microscopy. In Press.Google Scholar
15.Cerezo, A., Grovenor, C.R.M., G.D.W. Smith, Appl. Phys. Lett. 46, 567 (1985).Google Scholar
16.Grovenor, C.R.M., Cerezo, A., Smith, G.D.W., in Microscopy of Semiconducting Materials, 1985, edited by Cullis, A.G., Holt, D.B. (Hilger, Bristol, 1985), pp. 423–428.Google Scholar
17.Grovenor, C.R.M., Cerezo, A., Smith, G.D.W., in Layered Structures, Epitaxy and Interfaces, edited by Gibson, J.M. and Dawson, L.R., (MRS. Pittsburgh, 1985) pp. 199–204.Google Scholar
18.Hubner, K., Phys. Stat. Sol. (a), 61, 665 (1980).Google Scholar
19.Pantelides, S.T., Long, M., in The Physics of SiO and its Interfaces, edited by Pantelides, S.T. (Pergamon, New York, 1978) pp. 339–343.Google Scholar
20.Silva, J.R.G. da, Pinatti, D.G., Anderson, C.E., Rudee, M.L., Phil. Mag. 31, 713 (1975).Google Scholar
21.Litovchenko, V.G., Sov. Phys. - Semiconductors, 6, 696 (1972).Google Scholar
22.Yasaitis, J.A., Kaplow, R., J. Appl. Phys. 43, 995 (1972).Google Scholar
23.Ernisse, E.P., Appl. Phys. Lett., 35, 8 (1979).Google Scholar
24.Irene, E.A., Dong, D.W., Zeto, R.J., J. Electrochem. Soc. 127, 396 (1980).Google Scholar