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Micromagnetics Simulation of Asymmetric Pseudo-Spin Valve Dots

Published online by Cambridge University Press:  01 February 2011

N. Dao ,
C. A. Ross ,
F. J. Castaño ,
M. J. Donahue  and
S. L. Whittenburg
N. Dao
Affiliation:
Department of Chemistry/AMRI, University of New Orleans, New Orleans, LA 70148, U.S.A.
C. A. Ross
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
F. J. Castaño
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
M. J. Donahue
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899, U.S.A.
S. L. Whittenburg
Affiliation:
Department of Chemistry/AMRI, University of New Orleans, New Orleans, LA 70148, U.S.A.
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Abstract

We present simulation results for Ni79Fe21 (5 nm)/Cu (3 nm)/Co (4nm) pseudo-spin valves. These simulations have been conducted on several different aspect ratios of rectangular dots. Distinct switches of the two magnetic layers were observed. At smaller aspect ratios, magnetization reversal proceeds through a leaf state in the soft layer and a flower state in the hard layer. For larger aspect ratios, reversal proceeds by nucleation and annihilation of domain walls. Our simulations show a reasonable agreement with the experimental results. Differences between the experimental and simulation results are discussed.

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