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Micro-Raman Characterization of Unusual Defect Structure in Arsenic-Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

David D. Tuschel  and
James P. Lavine
David D. Tuschel
Affiliation:
Imaging Research and Advanced Development, Eastman Kodak Company, Rochester, NY 14650–2132, david.tuschel@kodak.com
James P. Lavine
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650–2008
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Abstract

Raman spectroscopy has often been used to study the damage to semiconductors induced by ion implantation. Off-axis, macro-Raman spectra reveal extensive damage to the silicon lattice, consistent with many literature reports. However, when the same samples were analyzed in the backscattering mode by micro-Raman spectroscopy, evidence was found for orientational dependent lattice damage and an unusual defect structure. P/O micro-Raman spectra reveal the spatially-varying appearance of a band between 505 and 510 cm−1 always accompanied by that of the silicon optical mode at 520 cm−1.

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