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Microscopic Determination of Stress Distribution in GaAs Grown at Low Temperature on GaAs (100)

Published online by Cambridge University Press:  22 February 2011

Zuzanna Liliental-Weber ,
A. Ishikawa ,
M. Teriauchi  and
M. Tanaka
Zuzanna Liliental-Weber
Affiliation:
Lawrence Berkeley Laboratory, 1 Cyclotron Rd., Berkeley, CA 94720
A. Ishikawa
Affiliation:
Institute of Scientific Measurements, Tohoku University, Sendai 980, Japan
M. Teriauchi
Affiliation:
Institute of Scientific Measurements, Tohoku University, Sendai 980, Japan
M. Tanaka
Affiliation:
Institute of Scientific Measurements, Tohoku University, Sendai 980, Japan
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Abstract

A microscopic strain distribution across commensurate interfaces between GaAs layers grown on semi-insulating GaAs substrates was observed by means of convergent beam electron diffraction (CBED) and large angle convergent beam methods (LACBED). Strain relaxation at a specific distance from the interface was observed in these layers without formation of misfit dislocations. It was proposed that specific point defects distributed close to the interface can explain the asymmetric broadening of high-order Laue zone (HOLZ) lines in the CBED patterns.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 183
Copyright
Copyright © Materials Research Society 1991

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References

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