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Microscopic role of a surfactant in epitaxial crystal growth

Published online by Cambridge University Press:  10 February 2011

Seung Mi Lee  and
Young Hee Lee
Seung Mi Lee
Affiliation:
Department of Semiconductor Science and Technology, Department of Physics and Semiconductor Physics Research Center
Young Hee Lee
Affiliation:
Jeonbuk National University, Jeonju, 561-756, Korea
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Abstract

We have investigated the kinetic role of a surfactant in the epitaxial crystal growth of Si/Ge using an ab initio molecular dynamics approach. We find that adsorption and diffusion of an adatom on monohydride Si(001) surface is drastically altered from that on a clean surface in several ways. We particularly emphasize the role of H as a surfactant, and this is further compared to typical group V materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 501: Symposium FF – Surface Controlled Nanoscale Materials for High-Added… , 1997 , 267
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Yu, B. D. and Oshiyama, A., Phys. Rev. Lett. 71, 585 (1993); 72, 3190 (1994).Google Scholar
[2] Tromp, R. M. and Reuter, M. C., Phys. Rev. Lett. 68, 954 (1992).Google Scholar
[3] Ohno, T., Phys. Rev. Lett. 73, 460 (1994).Google Scholar
[4] Oh, C. W., Kim, E., and Lee, Y. H., Phys. Rev. Lett. 76, 776 (1996).Google Scholar
[5] Kim, E., Oh, C. W., and Lee, Y. H., accepted to Phys. Rev. Lett.Google Scholar
[6] Osten, H. J., Klatt, J., Lippert, G., Dietrich, B., and Bugiel, E., Phys. Rev. Lett. 69, 450 (1992).Google Scholar
[7] Ohta, G., Fukatsu, S., Ebuchi, Y., Hattori, T., Usami, N., and Shiraki, Y., Appl. Phys. Lett. 65, 2975 (1994).Google Scholar
[8] Sakai, A. and Tatsumi, T., Appl. Phys. Lett. 64, 52 (1994).Google Scholar
[9] Sumimoto, K., Kobayashi, T., Shoji, F., and Oura, K., Phys. Rev. Lett. 66, 1193 (1991).Google Scholar
[10] Fukatsu, S., Yoshida, H., Fujiwara, A., Takahashi, Y., and Shiraki, Y., Appl. Phys. Lett. 61, 804 (1992).Google Scholar
[11] Sakamoto, K., Matsuhata, H., Miki, K., and Sakamoto, T., J. Cryst. Growth, 157, 295 (1995).Google Scholar
[12] Voigtlander, B. and Zinner, A., Surf. Sci. Lett. 292, L775 (1993).Google Scholar
[13] Chun, Y. J., Okada, Y., and Kawabe, M., Jpn. J. Appl. Phys. 32, L1085 (1993).Google Scholar
[14] Copel, M. and Tromp, R. M., Phys. Rev. Lett. 72, 1236 (1994); ibid, 76, 2603 (1996).Google Scholar
[15] Copel, M. and Tromp, R. M., Appl. Phys. Lett. 58, 2648 (1991).Google Scholar
[16] Eaglesharn, D. J., Unterwald, F. C., and Jacobson, D. C., Phys. Rev. Lett. 70, 966 (1993).Google Scholar
[17] Kahng, S. -J., Park, I. -Y., and Kuk, Y.. This paper was submitted to Phys. Rev. Lett. at the same time.Google Scholar
[18] Car, R. and Parrinello, M., Phys. Rev. Lett. 55, 2471 (1985).Google Scholar
[19] Kleinman, L. and Bylander, D. M., Phys. Rev. Lett. 48, 1425 (1982).Google Scholar
[20] Brocks, G., Kelly, P. J., and Car, R., Phys. Rev. Lett. 66, 1729 (1991).Google Scholar
[21] Northrup, J. E., Phys. Rev. B 44, 1419 (1991).Google Scholar
[22] Kim, E., Oh, C. W., and Lee, Y. H., Mat. Res. Soc. Proc. 448, 135 (1997).Google Scholar
[23] Lee, S. M. and Lee, Y. H., unpublished.Google Scholar