Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-25T20:13:20.124Z Has data issue: false hasContentIssue false
  • English
  • Français

Microscopy of Thin Si Films During Lamp Zone Melting

Published online by Cambridge University Press:  28 February 2011

D. Dutartre ,
M. Haond  and
D. Bensahel
D. Dutartre
Affiliation:
Centre National d'Etudes des Télécommunications, BP 98, 38243, Meylan–Cedex, France.
M. Haond
Affiliation:
Centre National d'Etudes des Télécommunications, BP 98, 38243, Meylan–Cedex, France.
D. Bensahel
Affiliation:
Centre National d'Etudes des Télécommunications, BP 98, 38243, Meylan–Cedex, France.
Get access

Abstract

The melting and solidification fronts of thin Silicon On Insulator (SOI) films have been observed in-situ. The melting front does not advance continuously but by bursts. This so called “explosive melting” allows to explain the appearance of defects (such as voids and surface roughness) observed in the recrystallized film. The freezing front is observed in the case where a pattern for the entrainment of the defects has been etched in the underlying oxide: we show that the entrainment effect is due to the spatial modulation of the solidification front by the structure. Furthermore, the scan speed influences the morphology of the liquid/solid interface and the defect entrainment efficiency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 89
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

/1/: Leamy, H. J., Chang, C. C., Baumgart, H., Lemons, R. A., Cheng, J., Matt. Lett., 1, 33, (1982).Google Scholar
/2/: Limanov, A. B., Givargizov, E. I., Matt. Lett., 2, 3, (1983).Google Scholar
/3/: Haond, M., Dutartre, D., Bensahel, D., Proc. MRS-Europe, Strasbourg, May 85, to be published in J. de Physique-suppl.Google Scholar
/4/: Vu, D.-P., Haond, M., Bensahel, D., Dupuy, M., J. Appl. Phys., 54, 437, (1983).Google Scholar
/5/: Superheated solid is used here for a solid in a metastable state with respect to the liquid, i.e., for a solid at a temperature above its melting point.Google Scholar
/6/: Miller, W. A., Chadwick, G. A., Acta Metallurgica, 15, 607, (1967).Google Scholar
/7/: Robinson, McD., Celler, G. K., Lischner, D. J., in “Comparison of Thin Film Transistor and SOl Technologies”, ed. Lam, H. W., Thompson, M. J., North-Holland, 1984, 71.Google Scholar
/8/: Smith, H. I., Thompson, C. V., Geis, M. W., Lemons, R. A., Bosch, M. A., J. Electrochem. Soc., 130, 2051, (1983).Google Scholar
/9/: Bosch, M. A., Lemons, R. A., Phys. Rev. Lett., 47, 1151, (1981).Google Scholar
/10/: Dutartre, r., Haond, M., Bensahel, D., Proc. MRS-Europe, Strasbourg, May 85, to be published in J. de Physique-Suppl.Google Scholar
/11/: Haond, M., Dutartre, D., Bensahel, D., this proceedings.Google Scholar
/12/: Geis, M. W., Smith, H. I., Tsaur, B.-Y., Fan, J. C. C., Maby, E. W., Antoniadis, D. A., Appl. Phys. Lett., 40, 158, (1982).Google Scholar
/13/: Bensahel, O., Haond, M., Dutartre, D., 4th Oxford Conference on Microscopy, Oxford, March 85, Inst. Phys. Conf. Ser. 76/3, pp 73, (ed. Adam Hilger Ltd., Bristol and New-York), 1985.Google Scholar