Hostname: page-component-848d4c4894-4hhp2 Total loading time: 0 Render date: 2024-05-06T10:17:57.633Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructural Evolution in Copper Films Undergoing Laser Pulsing at High Pressures

Published online by Cambridge University Press:  10 February 2011

R. Jakkaraju ,
C. D. Dobson  and
A. L. Greer
R. Jakkaraju
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, UK
C. D. Dobson
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, UK
A. L. Greer
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, UK
Get access

Abstract

A novel process of pulse-heating copper films under high pressure has been developed for filling high-aspect-ratio vias and contact holes with copper. A copper film is sputter-deposited on to an oxidised silicon substrate containing an array of via holes with varied aspect ratios. The film, which is thick enough to bridge over the via holes, is then subjected to laser pulse heating under selected pressures of inert gas. Via filling has been achieved, up to an aspect ratio of 6 for 0.35 μm diameter holes. The microstructure of the pulse-heated copper films has been investigated by X-ray diffraction, and by focused ion beam microscopy (FIB) including sectioning. The FIB images of the film over a via pattern show a ‘chequer-board’ pattern of grains corresponding to the square pattern of via holes underneath. This pattern can be explained by transient melting of the film under pulse-heating and subsequent solidification in which each via hole acts as a nucleation site and has a crystal associated with it. Even though the as-deposited films are fine-grained and have (111) texture, the treated films can show (111) or (100) texture, depending on processing conditions. The origins of the final film texture and the possibilities for microstructural control are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 111
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kang, H. K., Ho, J. S. H. and Wong, S. S., IEEE Electron Device Lett. 13, 448 (1992).Google Scholar
2. Shterenfeld-Lavie, Z., Rabinovich, I., Levy, J., Haim, A., Dobson, C. D., Buchanan, K., Rich, P. and Thomas, D. J., Proc. VMIC Conf 1995, pp 31–37.Google Scholar
3. Jongste, J. F., Li, X., Lokker, J. P., Jansen, G. C. A., Radelaar, S., and de Loos, Th. W., Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, Havemann, R., Schmitz, J., Komiyama, H., and Tsubouchi, K., Eds., (MRS, Pittsburgh, PA), 51,1997.Google Scholar
4. Fujikawa, T., Suzuki, K., Masui, T. and Ohnishi, T., Proc. Inter. Conf HIP (HIP 99) 1999, pp. 278–281.Google Scholar
5. Trikon Technologies (Newport, Gwent, UK), unpublished research.Google Scholar
6. Knorr, D. B. and Rodbell, K. P., J. Appl. Phys. 79, 2409 (1996).Google Scholar
7. Zielinski, E. M., Vinci, R. P., and Bravman, J. C., J. Appl. Phys. 76, 4516 (1994).Google Scholar
8. Kurz, W. and Fisher, D. J., Fundamentals of Solidification, (Transtech Pub., Switzerland 1986), p. 71.Google Scholar
9. Carel, R., Thompson, C. V. and Frost, H. J., Acta. Mater. 44, 2479 (1996).Google Scholar
10. van den Homberg, M. J.C., Alkemade, P. F.A., Verbruggen, A. H., Dirks, A. G., Hurd, J.L. and Radelaar, S., Microelec. Eng. 35, 277 (1997).Google Scholar
11. Gavillet, J., Weaver, D. J., Prutton, M., Barkshire, I. R., Huq, E., Prewett, P. D., Foord, D. T. and Greer, A. L., “Formation of bamboo-like and single-crystal Al interconnect lines by directional solidification”, paper in preparation.Google Scholar