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Microstructure and Dangling Bond Defects in Amorphous Hydrogenated Silicon Deposited Near Room Temperature

Published online by Cambridge University Press:  21 February 2011

Man Ken Cheung  and
Mark A. Petrich
Man Ken Cheung
Affiliation:
Department of Chemical Engineering, Northwestern University, Evanston, IL 60208, USA
Mark A. Petrich
Affiliation:
Department of Chemical Engineering, Northwestern University, Evanston, IL 60208, USA
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Abstract

The microstructure of high-density amorphous hydrogenated silicon (a-S.i:H) films deposited at 50°C substrate temperature was revealed by infrared (IR) and nuclear magnetic resonance (NMR) spectroscopies to be similar to that of “device-quality” a-Si:H films deposited at standard “optimum” conditions. However, optical absorption measurements of these low microstructure 50°C films with photothermal deflection spectroscopy indicate that they have higher densities of gap state defects and localized band tail states than “device-quality” films deposited at standard substrate temperatures. The correlation between the amount of microstructure and electronic properties is not unique. A low amount of microstructure is a necessary, but not sufficient, requirement for high electronic quality a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 191
Copyright
Copyright © Materials Research Society 1992

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References

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