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Microstructure and Hydrogen Dynamics in a-Si1-xCx:H

Published online by Cambridge University Press:  15 February 2011

R. Shinar ,
J. Shinar ,
D. L. Williamson ,
S. Mitra ,
H. Kavak  and
V. L. Dalal
R. Shinar
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011 Microanalytical Instrumentation Center, Iowa State University, Ames, IA 50011
J. Shinar
Affiliation:
Ames Laboratory - USDOE and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011
D. L. Williamson
Affiliation:
Department of Physics, Colorado School of Mines, Golden, CO 80401
S. Mitra
Affiliation:
Department of Engineering Physics, University of Tulsa, Tulsa, OK 74104
H. Kavak
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011 Physics Department, Cukurova University, 101330 Adana, Turkey
V. L. Dalal
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011
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Abstract

Small angle x-ray scattering (SAXS), IR spectroscopy, and deuterium secondary ion mass spectrometry (DSIMS) were used to study the microstructure and hydrogen dynamics of undoped and boron-doped if-sputter-deposited (RFS) and electron cyclotron resonance (ECR)-deposited hydrogenated amorphous silicon carbides (a-Si1-xCx:H) with x ≤ 19 at.%. The SAXS measurements indicated residual columnar-like features and roughly spherical nanovoids of total content CnV ≤ 1.0 vol.%. The growth of CnV with annealing was due largely to an increase in the average nanovoid radius. It was noticeably smaller than in RFS a-Si:H films. The IR spectra demonstrated H transfer by annealing from mostly bulk-like Si-H groups to C-bonds. The H diffusion and its temperature dependence in undoped films resembled those of a-Si:H and were consistent with the SAXS and IR data. Suppression of long-range motion of most of the H atoms, consistent with increased CnV was observed in B-doped ECR films. However, a small fraction of the H atoms appeared to undergo fast diffusion, reminiscent of the fast diffusion in doped a-Si:H. The results are consistent with impeded relaxation processes of the Si network, caused by the presence of C atoms, and H trapping at C-H bonds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 329
Copyright
Copyright © Materials Research Society 1999

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