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Microstructure, Damage and Resistance during Electromigration Life-Testing of Al-Cu Interconnects

Published online by Cambridge University Press:  21 February 2011

W.C. Shih ,
A.L. Greer ,
Y.Z. Xu  and
B.K. Jones
W.C. Shih
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
A.L. Greer
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
Y.Z. Xu
Affiliation:
Lancaster University, School of Physics and Materials, Lancaster LA1 4YB, United Kingdom
B.K. Jones
Affiliation:
Lancaster University, School of Physics and Materials, Lancaster LA1 4YB, United Kingdom
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Abstract

Unpassivated 1.4 mm long lines of Al-4wt.%Cu metallization have been successively imaged (by scanning electron microscopy) and electromigration stressed until failure. The resistance of lines, evolution of line microstructure and the development of electromigration damage are thus discontinuously recorded through the accelerated life-testing (260°C, 2 × 1010 A m-2). Correlations are made among microstructure evolution, electromigration damage development and line resistance. The probable mechanisms of damage development are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 369
Copyright
Copyright © Materials Research Society 1993

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References

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