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Microstructure-based Simulations of the High-Strain-Rate Response of Heterogeneous Ti/Al/B Reactive Powder Mixtures

Published online by Cambridge University Press:  14 March 2013

Manny Gonzales ,
Ashok Gurumurthy ,
Gregory B. Kennedy ,
Arun M. Gokhale  and
Naresh N. Thadhani
Manny Gonzales
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332, U.S.A.
Ashok Gurumurthy
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332, U.S.A.
Gregory B. Kennedy
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332, U.S.A.
Arun M. Gokhale
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332, U.S.A.
Naresh N. Thadhani
Affiliation:
School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332, U.S.A.
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Abstract

We investigate the dynamic behavior under uniaxial stress loading conditions of heterogeneous mixtures of Ti/Al/B via impact simulations on simulated microstructures. We simulate a range of Al concentrations at a constant theoretical material density (TMD) to determine their effects on the mechanical response of a realistic microstructure to impact conditions. We also study particle-level effects such as mixing, extreme deformation, and hot spot formation due to void collapse, as a function of microstructure. Our goal is to shed light on the possible meso-scale phenomena that makes a certain mixture more reactive than others of variable Al composition.

Keywords

simulationenergetic materialchemical reaction

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Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1521: Symposium OO – Properties, Processing and Applications of Reactive Materials , 2013 , mrsf12-1521-oo08-05
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

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