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Microstructures in Pb(In1/2Nb1/2)O3 with the Perovskite B-site Randomness

  • S. Mori (a1), K. Kurushima (a2), K. Kobayashi (a1), H. Ohwa (a3), N. Yasuda (a3) and K. Ohwada (a4)...

We have investigated microstructures in both the antiferroelectric (AFE) and relaxor states of Pb(In1/2Nb1/2)O3 (PIN) with the perovskite structure by a transmission electron microscopy (TEM). Electron diffraction (ED) experiments revealed that the AFE state is characterized as the modulated structure with the modulation vector of q=1/4 1/4 0. High-resolution TEM images clearly show the coexistence of two types of domains consisting of the modulated and the nonmodulated structures with the 100 ∼ 200 nm size. On the other hand, in the relaxor state there appear two types of diffuse scatterings in the ED patterns. One is diffuse spots at the 1/2 1/2 0-type reciprocal positions and the other is diffuse streaks elongating along the <110> direction around the fundamental spots. The real-space TEM images clearly demonstrate the presence of nanodomains with the average size of ∼ 5 nm. These nanodomains in the relaxor state should be responsible for the characteristic dielectric properties.

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