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Microstructures in Sic and Si3N4 Implanted with Ti and Heat Treated

Published online by Cambridge University Press:  25 February 2011

R. G. Vardiman
R. G. Vardiman*
Affiliation:
Naval Research Laboratory Washington, DC 20375-5000, USA
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Abstract

Bulk SiC and Si3N4 have been implanted with Ti at room temperature, and subsequently vacuum heat treated between 800° and 1100°C. All specimens were backthinned by ion milling and examined in TEM. SiC becomes amorphous on implantion, and develops a fine dispersion of TiC precipitates up to 800°C. At 900°C recrystallization has begun, possibly nucleated by the TiC particles. Si3N4 shows fine TiN particles in an amorphous matrix even as implanted. This structure is retained up to 900°C. At 1000°C, regrowth of the Si3N4 apparently from the substrate begins, and the TiN particles also grow as large as 200nm.

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