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Minority Carrier Diffusion Length Improvement in Czochralski Silicon by Aluminum Gettering

Published online by Cambridge University Press:  26 February 2011

Subhash M. Joshi ,
Ylrich M. GÖsele  and
Teh Y. Tan
Subhash M. Joshi
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708–0300
Ylrich M. GÖsele
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708–0300 Max-Planck-Institute of Microstructure Physics, Weinberg 2, D–06120 Halle/Saale, Germany
Teh Y. Tan
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708–0300
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Abstract

Gettering is widely used for fabricating integrated circuits using Si substrates, and has great potential for solar cell fabrications as well. Recently available solar cell efficiency studies have shown the benefits of the wafer backside Al, attributable to effects of gettering, a wafer backside field, and passivation of grain boundaries and dislocations. In this paper, we report experimental results which showed unambiguously that Czochralski Si wafer bulk minority carrier diffusion lengths can be significantly improved due to gettering of impurities by wafer backside Al, which also provided a protection from environmental contamination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 279
Copyright
Copyright © Materials Research Society 1995

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