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MOCVD of SnSx thin films for solar cell application

Published online by Cambridge University Press:  13 March 2015

Andrew J. Clayton ,
Stuart J. C. Irvine ,
Vincent Barrioz  and
Alessia Masciullo
Andrew J. Clayton
Affiliation:
Centre for Solar Energy Research, Glyndŵr University, Ffordd William Morgan St. Asaph Business Park, Denbighshire, LL17 0JD, U.K.
Stuart J. C. Irvine
Affiliation:
Centre for Solar Energy Research, Glyndŵr University, Ffordd William Morgan St. Asaph Business Park, Denbighshire, LL17 0JD, U.K.
Vincent Barrioz
Affiliation:
Centre for Solar Energy Research, Glyndŵr University, Ffordd William Morgan St. Asaph Business Park, Denbighshire, LL17 0JD, U.K.
Alessia Masciullo
Affiliation:
Centre for Solar Energy Research, Glyndŵr University, Ffordd William Morgan St. Asaph Business Park, Denbighshire, LL17 0JD, U.K.
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Abstract

An inline metal organic chemical vapor deposition system was used to deposit tin sulfide at temperatures >500 °C. Tetramethyltin was used as the tin source and diethyldisulfide as the sulfur source. An overhead injector configuration was used delivering both precursors directly over the substrate. The tin and sulfur precursors were premixed before injection to improve chemical reaction in the gas phase. Growth temperatures 500 – 540 °C were employed producing films with approximate 1:1 stoichiometry of Sn and S detected by energy dispersive x-ray spectroscopy. X-ray diffraction showed there to be mixed phases with Sn2S3 present with SnS.

Keywords

thin filmmetalorganic depositionphotovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1738: Symposium V – Sustainable Solar-Energy Conversion Using Earth-Abundant Materials , 2015 , mrsf14-1738-v14-07
Copyright
Copyright © Materials Research Society 2015 

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References

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