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Mocvd-Preparation And In-Situ/Uhvanalysis Of Epitaxial Inp-Films
Published online by Cambridge University Press: 10 February 2011
Abstract
Surface science analysis can be utilized for improving the preparation of hetero-interfaces. Epitaxial InP(100)-films were prepared with TBP (tertiarybutylphosphine) and TMin (trimethylindium) as precursors in a commercial MOCVD apparatus. With a new type of transfer system the sample is shifted from the MOCVD apparatus to a UHV chamber within 20 s. A description of the new transfer system is given. RAS (reflection anisotropy spectroscopy) is carried out in the MOCVD and UHV environments. It shows whether the InP(100) surface corresponds to the (2×1) or (2×4) reconstruction or whether it is oxidized. For the first time contamination-free transfer of the (2×1) reconstructed, P-rich InP(100) surface is achieved.
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- Copyright © Materials Research Society 1999