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A Model for Comprehensive Studies of Porosity in Mesoporous Low-K Dielectrics

Published online by Cambridge University Press:  01 February 2011

Mihail P. Petkov
Mihail P. Petkov*
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109, U.S.A.
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Abstract

The successful integration of a porous low dielectric constant (k) material as an interlevel dielectric depends on the morphology of the embedded porosity. Simple site percolation models are utilized here to investigate porosity properties of low-k dielectrics with respect to the current technology trends. Significant differences between two generations of porous dielectrics, k < 2.4 and k < 2.1, are found. The porosity fraction in the latter is above the percolation threshold, which may have serious impact on the materials physical properties and its compatibility with production steps.

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