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A Model for Lattice-Mismatched Epitaxy: A Continuum View

Published online by Cambridge University Press:  25 February 2011

B. G. Orr  and
C. W. Snyder
B. G. Orr
Affiliation:
The Harrison M. Randall Laboratory, The University of Michigan, Ann Arbor, MI 4S104–1120.
C. W. Snyder
Affiliation:
The Harrison M. Randall Laboratory, The University of Michigan, Ann Arbor, MI 4S104–1120.
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To date, primarily only idealized equilibrium models for the growth mode and strain relaxation of elastically strained overlayers have been proposed. Here we present a general continuum model for lattice-mismatched epitaxy. As molecular beam epitaxy is inherently a nonequilibrium growth process, surface diffusion kinetics is incorporated in the model. Additionally, a new strain relaxation mechanism in a dislocation-free film is considered. Experimental support for our view is obtained from measurements made by reflection high energy electron diffraction, scanning tunneling microscopy, and transmission electron microscopy on the growth of InGaAs on GaAs(100). These results demonstrate the strong effects which strain, surface diffusion kinetics, and surface energy have on growth mode. From analytical and numerical analysis in 1 + 1 dimensions, the interrelationship of such physical factors is revealed. Our improved understanding enables control over the growth behavior of strained-layer superlattices and heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 429
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

Snyder, C. W., Orr, B. G., Kessler, D., and Sander, L. M., “The Growth of Highly Strained InGaAs films as studied by STM and RHEED”, Phys. Rev. Lett., 66, 3032 (1991).Google Scholar
2. Snyder, C. W., Mansfield, J. F., and Orr, B. G., “Kinetically Controlled Critical Thickness for Coherent Islanding and Thick Highly Strained Pseudomor-phic films of InGaAs on GaAs(100)”, Phy. Rev. B. 46, 9551 (1992).CrossRefGoogle Scholar
3. Snyder, C. W., Orr, B. G., and Munekata, H., “The effect of surface tension on the growth mode of highly strained InGaAs oil GaAs(100)”, accepted to Appl. Phys. Lett.Google Scholar
4. Orr, B. G., Snyder, C. W., Kessler, D., and Sander, L. M., “Strain Induced Roughening as a Mechanism for Coherent Island Growth”, Europhys. Lett., 19, 33 (1992).CrossRefGoogle Scholar