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Modeling of Boron Diffusion and Activation for Nonequilibrium Rapid Thermal Annealing Application

Published online by Cambridge University Press:  21 February 2011

H. Kinoshita ,
T. H. Huang  and
D. L. Kwong
H. Kinoshita
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712
T. H. Huang
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering The University of Texas at Austin, Austin, TX 78712
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Abstract

The diffusion and activation of ion implanted boron and BF2 during rapid thermal annealing (RTA) was modeled by considering the reaction kinetics between point defects and boron. The diffusion model uses the Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose BF2 implantation. Excellent simulation results have been achieved by using a single set of diffusion and kinetic parameters to model the enhanced diffusion of boron during RTA for a wide range of B and BF2 implant doses.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 259
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Fair, R. B., Gardner, C. L., Johnson, M. J., Kenkel, S. W., Rose, D. J., Rose, J. E., and Subrahmanyan, R., IEEE Trans. CAD, 10, 643 (1991).Google Scholar
2. Kim, Y. M., Lo, G. Q., Kinoshita, H., and Kwong, D. L., J. Electrochem. Soc., 138, 1122 (1991).CrossRefGoogle Scholar
3. Mulvaney, B. J., Richardson, W. B. and Crandle, T. L., IEEE Trans. Computer-Aided Design, CAD- 8, 336 (1989).Google Scholar
4. Klein, K. M., Park, C., and Tasch, A. F., IEDM Tech. Dig., 745 (1990).Google Scholar
5. Ho, C. P., Plummer, J. D. and Dutton, R. W., IEEE Trans. on Elect. Dev., ED- 30, 1438 (1983).Google Scholar
6. Wu, I. W., and Chen, L. J., J. Appl. Phys., 58, 3032 (1985).Google Scholar
7. Weinzierl, S. R., Heddleson, J. M., Hillard, R. J., P. Rai-Choudhury, Mazur, R. G., Ozburn, C. M., and Potyraj, P., Solid State Technology, pp. 31–38, Jan. 1993.Google Scholar
8. Baccus, B., Wada, T., Shigyo, N., Norishima, M., Nakajima, H., lnou, K., linuma, T., and Iwai, H., IEEE Trans. on Elect. Dev., 39, 648 (1992).Google Scholar
9. Solmi, S., Landi, E. and Baruffaldi, F., J Appl. Phvs., 68. 3250 (1990).CrossRefGoogle Scholar
10. Solmi, S., Cembali, F., Fabbri, R., Lotti, R., Servidori, M., Anderle, M and Canteri, R., Nucl. Instr. and Meth., B37/38, 394 (1989).Google Scholar
11. Sedgwick, T. O., Michel, A. E., Deline, V. R., Cohen, S. A. and Lasky, J. B., J. Appl. Phys., 63, 1452 (1988).Google Scholar