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Modeling of Diffusion and Activation of Low Energy Arsenic Implants in Silicon

Published online by Cambridge University Press:  01 February 2011

Srinivasan Chakravarthi ,
Chidambaram P.R. ,
Charles Machala ,
Amitabh Jain  and
Xin Zhang
Srinivasan Chakravarthi
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243.
Chidambaram P.R.
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243.
Charles Machala
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243.
Amitabh Jain
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243.
Xin Zhang
Affiliation:
Silicon Technology Development, Texas Instruments, Dallas, TX 75243.
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Summary

In summary, we find it is possible to model the extent of arsenic diffusion during front-end and back-end processes that define the final junction depth. The key features of the model can be summarised as: (a) Interstitials from implant damage play a diminished role as implant energies are scaled; (b) As4V formation and precipitation at high concentrations is critical to accurate modeling of ultra-shallow arsenic junctions. These models when used with device simulations help optimize transistor performance/tradeoffs.

We would like to thank Pavel Fastenko and Scott T. Dunham (University of Washington) for details and discussion regarding their modeling results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C3.7
Copyright
Copyright © Materials Research Society 2002

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