Hostname: page-component-cb9f654ff-c75p9 Total loading time: 0 Render date: 2025-08-20T18:18:34.243Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling of Extended Defects in Silicon

Published online by Cambridge University Press:  15 February 2011

M. E. Law ,
K. S. Jones ,
S. K. Earles ,
A. D. Lilak  and
J- W. Xu
M. E. Law
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, law@tcad.ee.ufl.edu
K. S. Jones
Affiliation:
Department of MSE, University of Florida, Gainesville, FL, 32611
S. K. Earles
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, law@tcad.ee.ufl.edu
A. D. Lilak
Affiliation:
Department of ECE, University of Florida, Gainesville, FL, 32611, law@tcad.ee.ufl.edu
J- W. Xu
Affiliation:
Semiconductor Group, Texas Instruments, Inc., Dallas, TX 75243
Get access

Abstract

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 3
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Griffin, P. B. and Plummer, J. D., in International Electron Device Meeting Proceedings, Los Angeles, 1986, p. 522.Google Scholar
2 Law, M. E. and Jones, K. S., in Process Modeling Symposium, Los Angeles, 1996 (Electrochemical Society), p. 374–378.Google Scholar
3 Frank, C. and Law, M. E., Applied Physics Letters 64, 1254–5 (1994).Google Scholar
4 Rafferty, C. S., Vuong, H.-H., Eshraghi, S. A., Giles, M. D., Pinto, M. R., and Hillenius, S. J., in International Electron Device Meeting Proceedings, Washington, D.C., 1993.Google Scholar
5 Hu, S. M., J. Appl. Phys. 57, 1069 (1985).Google Scholar
6 Hu, S. M., J. Appl. Phys. 57, 4527 (1985).Google Scholar
7 Dunham, S. T. and Jeng, N., J. Appl. Physics 59, 2016–2018 (1991).Google Scholar
8 Hu, S. M., Journal of Applied Physics (1981).Google Scholar
9 Packan, P. A. and Plummer, J. D., J. Appl. Phys. 68, 4327 (1990).Google Scholar
10 Stolk, P. A., Gossmann, H. J., Eagleshamn, D. J., Jacobson, D. C., and Poate, J. M. J. Appl. Phys. Lett. 66, 568 (1995).Google Scholar
11 Liu, J., Thesis, University of Florida, 1996.Google Scholar