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Modeling of Self-Aligned Silicidation in 2D and 3D: Growth Suppression by Oxygen Diffusion

Published online by Cambridge University Press:  14 March 2011

Victor Moroz  and
Takako Okada
Victor Moroz
Affiliation:
Avant! Corporation, 46871 Bayside Parkway, Fremont, CA 94538, U.S.A.
Takako Okada
Affiliation:
Toshiba Corporation, Research and Development Center, 1 Komukai-Toshiba-cho, Kawasaki 210, Japan
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Abstract

Stress-strain effects and physical processes during formation of the self-aligned silicides are analyzed. A new model for predictive simulation of the self-aligned silicidation is suggested. The model is based on suppression of diffusion and reaction rate of the silicon atoms inside silicide in the presence of oxygen atoms, injected into silicide from the neighbor oxide regions such as oxide spacer, TEOS at STI (Shallow Trench Isolation) and pad oxide. The model is demonstrated to explain the experimentally observed silicide shape.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C9.3.1
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Fornara, P. and Poncet, A., International Electron Devices Meeting Technical Digest, 73–76 (1996).Google Scholar
2. Nava, F. Valeri, S., Majni, G., Cembali, A., Pignatel, G. and Queirolo, G., J. Appl. Phys., 52, 6641–6646 (1981).Google Scholar
3. Jiang, H., Whitlow, H. J., Ostling, M., Niemi, E., d'Heurle, F. M. and Petersson, C. S., J. Appl. Phys., 65, 567–574 (1989).Google Scholar
4. Russell, S. W., Strane, J. W., Mayer, J. W. and Wang, S. Q., J. Appl. Phys., 76, 257–263 (1994).Google Scholar
5. Oh, Y.-S. and Ward, D. E., International Electron Devices Meeting Technical Digest, 509–512 (1998).Google Scholar