Published online by Cambridge University Press: 25 February 2011
Recently available experimental data indicate that the solidification ofundercooled molten silicon prepared by pulsed laser melting of amorphoussilicon is a complex process. Time-resolved reflectivity and electricalconductivity measurements provide information about near-surface melting andsuggest the presence of buried molten layers. Transmission electronmicrographs show the formation of both fine- and large-grainedpolycrystalline regions if the melt front does not penetrate through theamorphous layer. We have carried out extensive calculations using a newlydeveloped computer program based on an enthalpy formulation of the heatconduction problem. The program provides the framework for a consistenttreatment of the simultaneous formation of multiple states and phase-frontpropagation by allowing material in each finite-difference cell to melt,undercool, nucleate, and solidify under prescribed conditions. Calculationsindicate possibilities for a wide variety of solidification behavior. Thenew model and selected results of calculations are discussed here andcomparisons with recent experimental data are made.
Research sponsored by the Division of Materials Sciences, U.S.Department of Energy under contract DE-AC05-840R21400 with MartinMarietta Energy Systems, Inc.