Hostname: page-component-7dd5485656-wlg5v Total loading time: 0 Render date: 2025-10-31T21:05:03.145Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling, Simulation and Control of Single Wafer Process in Cluster Tool Base on Ft-Ir In-Line Sensor

Published online by Cambridge University Press:  15 February 2011

Shaohua Liu ,
Peter Solomon ,
R. Carpio ,
B. Fowler ,
D. Simmons ,
J. Wang ,
R. Wise ,
G. Imper ,
N.B. Riley  and
M. Moslehi
...Show all authors
Shaohua Liu
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT 06118.
Peter Solomon
Affiliation:
Advanced Fuel Research, Inc., East Hartford, CT 06118.
R. Carpio
Affiliation:
SEMATECH, Austin, TX 78741.
B. Fowler
Affiliation:
SEMATECH, Austin, TX 78741.
D. Simmons
Affiliation:
SEMATECH, Austin, TX 78741.
J. Wang
Affiliation:
Texas Instruments, Inc., Dallas, TX 75265.
R. Wise
Affiliation:
Texas Instruments, Inc., Dallas, TX 75265.
G. Imper
Affiliation:
Applied Materials, Inc., Santa Clara, CA 95054.
N.B. Riley
Affiliation:
Applied Materials, Inc., Santa Clara, CA 95054.
M. Moslehi
Affiliation:
CVC Products, Inc., Fremont, CA 94538.
N.M. Ravindra
Affiliation:
New Jersey Institute of Technology, NJ 08540.
Get access

Abstract

This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 269
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Gross, P., “FT-IR Spectroscopy of Layered Structures-Thin Solid Films, Coated Substrates. Profiles, Multi-layers” SPIE Vol. 1575, 169-179.Google Scholar
2 Liu, S., Haigis, J., Ditaranto, M., Kinsella, K., Markham, J., Li, Q., Fenner, D.B., Solomon, P., Farquharson, S., and Morrison, P., “Process Monitor and Control of Integrated Circuit Manufacturing Using FT-IR spectroscopy” Proceeding of AWMA/SPIE Meeting, Mc lean, VA, (Nov. 7-10, 1994)Google Scholar
3 Carpio, R., Fowler, B., Simmons, D., Liu, S. and Solomon, P., “A Comparison of Infrared Reflectance Spectroscopy and Spectroscopic Ellipsometry for Polysilicon Film Process Control”, Proceeding of Electro-Chemical Society, Miami Beach, FL, Oct. 9-14, 1994 Google Scholar
4 Fowler, B., Simmons, D., Carpio, R., Liu, S., and Solomon, P., “The Measurement of Sub-Micron Epitaxial Layer Thickness and Free Carrier Concentration by Infrared Reflectance Spectroscopy” Proceeding of Electro-Chemical Society, Vol. 94–33, pg. 254, Miami Beach, FL, Oct. 9-14, 1994 Google Scholar
5 Liu, S., et. al., patent pending.Google Scholar
6 Trade Mark of Applied Materials, Inc. Google Scholar
7 Wang, C. J., Wise, R., Liu, S., Haigis, J., Farquharson, S., and Fowler, B., “In-line FT-IR for Epitaxial Silicon Film Thickness Measurement on An Applied Materials Centura Cluster Tool” Proceeding of Annual Semiconductor Manufacture Conference, Boston, MA, Nov. 14-17, 1994 Google Scholar