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Modification of Si(001)/SiO2 Interfaces by Nitric Oxide Treatments: An Electron Paramagnetic Resonance Study

Published online by Cambridge University Press:  10 February 2011

Jean-Louis Cantin  and
Hans Jurgen von Bardeleben
Jean-Louis Cantin
Affiliation:
Groupe de Physique des Solides, Universités Paris 6 & 7, UMR au CNRS 75-882 Place Jussieu, 75251 Paris Cedex 05, France. cantin@gps.jussieu.fr
Hans Jurgen von Bardeleben
Affiliation:
Groupe de Physique des Solides, Universités Paris 6 & 7, UMR au CNRS 75-882 Place Jussieu, 75251 Paris Cedex 05, France. cantin@gps.jussieu.fr
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Abstract

The modification of the Si(001)/SiO2 interface and the related interface defect reduction by thermal treatments in nitric oxide (NO) have been studied by Electron Paramagnetic Resonance spectroscopy for 630Å thick and ultrathin (28Å) oxides. The effects of annealing temperature, annealing time and rapid (RTN) or furnace annealing have been explored. Our results show that an appropriate NO treatment can drastically reduce the defect densities if, in addition to N incorporation in the transition layer near the interface, the thermal relaxation of the nitrided oxide is allowed. Our results indicate that NO treatment can lead to “defect free” Si/SiO2 interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 245
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] For a recent overview see The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 3, Massoud, H.Z., Poindexter, E.H., Helms, C.E. (Eds), The Electrochemical Society Inc. (1996).Google Scholar
[2]Pfister, J.R. et al., IEEE Trans. Electron Devices 37, 1842 (1990).Google Scholar
[3]Yang, H.Y., Niimi, H., Lucovsky, G., J. Appl. Phys. 83, 2327 (1998).Google Scholar
[4]Hwang, H., Ting, W., Kwong, D.L., Lee, J., IEDM Tech. Dig., 421 (1990).Google Scholar
[5]Bhat, M., Han, L.K., Wristers, D., Yan, J., Kwong, D.L., Fulford, J., Appl. Phys. Lett. 66, 1225 (1995)Google Scholar
[6]Green, M.L. et al. , Appl. Phys. Lett. 65, 848 (1994).Google Scholar
[7]Nakayama, S., Sakai, T., J. Electrochem. Soc. 144, 4326 (1997).Google Scholar
[8]Lu, H.C., Gusev, E.P., Gustafsson, T., Garfunkel, E., Green, M.L., Brasen, D., Feldman, L.C., Appl. Phys. Lett. 69, 2713 (1996).Google Scholar
[9]Baumvol, I.J.R., Ganem, J.J., Gosset, L.G., Trimaille, I., Rigo, S., Appl. Phys. Lett. 72, 2999 (1998).Google Scholar
[10]Yao, Z.Q., Harrison, H.B., Dimitrijev, S., Yeow, Y.T., IEEE Electron Dev. Lett. 15, 1225 (1996).Google Scholar
[11]Kamath, A., Kwong, D.L., Sun, Y.M., Blass, P.M., Whaley, S., White, J.M., Appl. Phys. Lett. 70 (1997), 63.Google Scholar
[12]Tompkins, H.G., Gregory, R.B., Deal, P.W., Smith, S.M., J. Vac. Sci. Technol. A 17, 391 (1999).Google Scholar
[13]Ono, H., Ikarashi, T.. Miura, Y., Hasegawa, E., Ando, K., Kitano, T., Appl. Phys. Lett. 74, 203 (1999).Google Scholar
[14]Hedge, R.I., Maiti, B., Rai, R.S., Reid, K.G., Tobin, P.J., J. Electrochem, Soc. 145, L13 (1998).Google Scholar
[15]Gosset, L.G., Ganem, J.J., Bardeleben, H.J. von, Rigo, S., Trimaille, I., Cantin, J.L., Akermark, T., Vickridge, I.C., J. Appl. Phys. 85, 3661 (1998).Google Scholar
[16]Gosset, L.G., Ganem, J.J., Trimaille, I., Rigo, S., Rochet, F., Dufour, G., Jolly, F., Stedile, F.C., Baumvol, I.J.R., Nucl. Instr. Meth. In Phys. Res. B, 136–138, 521 (1998).Google Scholar
[17]Poindexter, E.H., Caplan, P.J., Deal, B.E., Razouk, R.R., J. Appl. Phys. 52, 879 (1979).Google Scholar
[18]Caplan, P.J., Poindexter, E.H., Deal, B.E., Razouk, R.R., J. Appl. Phys. 50, 5847 (1979).Google Scholar
[19]Cantin, J.L., Schoisswohl, M., Bardeleben, H.J. von, Morazzani, V., Ganem, J.J., Trimaille, I. in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 3, Massoud, H.Z., Poindexter, E.H., Helms, C.E. (Eds), The Electrochemical Society Inc. (1996), p28Google Scholar
[20]Cantin, J. L., Ph D Thesis, Université Paris 6 (1997)Google Scholar
[21]Stesmans, A., Afanasev, V.V., J. Phys. Condens. Mat. 10, L19 (1998)Google Scholar
[22]Cantin, J.L., Schoisswohl, M., Bardeleben, H.J. von, Zoubir, N. Hadj, Vergnat, M., Phys. Rev. B 52, R11599 (1995)Google Scholar
[23]Edwards, A. H. in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 1, Helms, C.R., Deal, B. (Eds), Plenum Press (1988), p271.Google Scholar
[24]Stesmans, A., Nouwen, B., Afanas'ev, V.V., Phys. Rev B 58, 15801 (1998).Google Scholar
[25]Stathis, J.H., Buchanan, D.A., Quinlan, D.L., Parsons, A.H., Kotecki, D.E., Appl. Phys. Lett. 62, 2682 (1993).Google Scholar
[26]Cantin, J.L. et al. , Thin Solid Films 276, 76 (1996).Google Scholar
[27]Stesmans, A., Appl. Surf. Sci. 30, 134 (1987).Google Scholar
[28]Carlos, W.E., Appl. Phys. Lett. 50, 1450 (1987).Google Scholar
[29]Stesmans, A., Appl. Phys. Lett. 68, 2723 (1996).Google Scholar
[30]Stesmans, A., Appl. Phys. Lett. 68, 2076 (1996).Google Scholar
[31]Aubert, P., Bardeleben, H.J. von, Delmotte, F., Cantin, J.L., Hugon, M.C., Phys. Rev. B 59 (1999)Google Scholar
[32]Stesmans, A., Afanasev, V.V., Phys. Rev. B 54, R11129 (1996)Google Scholar
[33]Stesmans, A., Afanasev, V.V., Revesz, A.G., Appl. Phys. Lett. 74, 1466 (1999).Google Scholar
[34]Dang, S.S., Takoudis, C.G., J. App. Phys. 86, 1326 (1999).Google Scholar
[35]Carr, E.C., Buhrman, R.A., Appl. Phys. Lett. 63, 54 (1993).Google Scholar
[36]Chang-Liao, K.S., Lai, H.C., Appl. Phys, Lett. 72, 2280 (1998).Google Scholar
[37]Ono, H., Ikarashi, T.. Miura, Y., Hasegawa, E., Ando, K., Kitano, T., Appl. Phys. Lett. 74, 203 (1999); and references in.Google Scholar
[38]Hedge, R.I., Tobin, P.J., Reid, K.G., Maiti, B., Ajuria, S. A., Appl, Phys. Lett. 66, 2882 (1995).Google Scholar
[39]Rignanese, G.M., Pasquarello, A., Charlier, J.C., Gonze, X., Car, R., Phys. Rev. Lett. 79, 5174 (1997).Google Scholar
[40]Okada, Y., Tobin, P.J., Lakhotia, V., Feil, W.A., Ajuria, S.A., Hedge, R.I., Apll. Phys. Lett. 63, 194 (1993).Google Scholar
[41]Lu, Z.H., Tay, S.P., Cao, R., Pianetta, P., Appl. Phys. Lett. 67, 2836 (1995).Google Scholar
[42]Kobeda, E., Irene, E.A., J. Vac. Sci. Technol. B 6, 574 (1988).Google Scholar
[43]Ushio, J., Maruizumi, T., Miyao, M., Appl. Pjys. Lett. 75, 680 (1999).Google Scholar
[44]Stesmans, A., Gorp, G. Van, Phys. Rev. B 52, 8904 (1995).Google Scholar
[45]Landsberger, L.M., Tiller, W.A., Appl. Phys. Lett. 51, 1416 (1987).Google Scholar