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Monitoring Of The Intermediate Products In The Thermal Decomposition Of SiH4, Si2H6, SiF4 AND SiH2F2

Published online by Cambridge University Press:  15 February 2011

Jae Hyun Han
Affiliation:
Dept. of Chemical Engineering, Seoul National University Shilim-dong San 56–1, Kwanak-ku, Seoul, Korea 151–742
Hyun-Kyu Ryu
Affiliation:
Dept. of Chemical Engineering, Seoul National University Shilim-dong San 56–1, Kwanak-ku, Seoul, Korea 151–742
Sang Heup Moon
Affiliation:
Dept. of Chemical Engineering, Seoul National University Shilim-dong San 56–1, Kwanak-ku, Seoul, Korea 151–742
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Abstract

Thermal decomposition of SiH4, Si2H6, SiF4 and SiH2F2 used as the reactants in the Si-CVD process was studied by monitoring the gaseous products with a quadrupole mass spectrometcr (QMS). The rates of SiH4 pyrolysis showed a large compensation effect at low pressures, which agreed with the theory of unimolecular reaction. Si2H6 decomposed at relatively low temperatures producing SiH4 as the intermediate products. The decomposition temperatures of the other compounds increased in the order of SiH4, SiH2F2 and SiF4. The pyrolysis rates of SiH2F2 and silanes, i.e., SiH4 or Si2H6, were enhanced synergically when they were mixed together. The results were explained by a reaction mechanism proposed based on analysis of the intermediates produced in the process.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Qian, Z.M., Mickel, H., Ammel, A.Van, Nijs, J. and Merteus, R., J Electrochem. Soc., 135, 2378 (1988).Google Scholar
2. Breiland, W.G., Coltrin, M.E. and Ho, P., J. Appl. Phys., 59, 3267 (1986).Google Scholar
3. Ho, P. and Breiland, W.G., Appl. Phys. Lett., 43, 125 (1983).Google Scholar
4. Frieser, R.G., J. Electrochem. Soc., 115, 401 (1968).Google Scholar
5. Nishizawa, J. and Nihira, H., J. Cryst. Growth, 45, 82 (1978).Google Scholar
6. Jasinski, J.M. and Gates, S.M., Ace. Chem. Res., 24, 9 (1991).Google Scholar
7. Nishida, S., Shimoto, T., Yamada, A., Karasawa, S., Konagai, M. and Takahashi, K., Appl. Phys. Lett., 49, 79 (1986).Google Scholar
8. Purnell, J.H. and Walsh, R., Proc. R. Soc. London Ser. A, 293, 543 (1966).Google Scholar
9. Newman, C.F., , H.E. Ring, O'Neal, M.A., Neska, F. and Shipleg, N., Int. J. Chem. Kinet., 11, 1167 (1979).Google Scholar
10. Viswanathan, R., Thompson, D.L. and Raff, L.M., J. Chem. Phys., 80, 4230 (1984).Google Scholar
11. Robinson, P.J. and Holbrook, K.A., Unimolecular Reaction, (John Wiley & Sons, New York, 1972), pp. 4344.Google Scholar
12. Coltrin, M.E., Kee, R.J. and Miller, J.A., J. Electrochem. Soc., 133, 1206 (1986)Google Scholar
13. Giunta, C.J., McCurdy, R.J., Chapple-Sokol, J.D. and Gordon, R.G., J. Appl. Phys., 67, 1062 (1990).Google Scholar
14. Lee, K.Y., Chung, C.-H., Han, J.H., Rhee, S.-W. and Moon, S.H., J. Electrochem. Soc., 139, 3539 (1992).Google Scholar
15. Richardson, J.T., Principles of Catalyst Developments, (Plenum Press, New York and London, 1982), p. 75.Google Scholar