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Morphology and Atomic Structure of Grain Boundaries in GaN Grown by MOVPE

Published online by Cambridge University Press:  01 February 2011

Eriko Takuma ,
Hideki Ichinose ,
Sakuntam Sanorpim  and
Kentaro Onabe
Eriko Takuma
Affiliation:
Department of Materials Science, School of Engineering, The University of Tokyo
Hideki Ichinose
Affiliation:
Department of Materials Science, School of Engineering, The University of Tokyo
Sakuntam Sanorpim
Affiliation:
Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JAPAN.
Kentaro Onabe
Affiliation:
Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JAPAN.
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Abstract

The morphology and the atomic structure of a hexagonal gallium nitride (h-GaN) grain boundary was investigated employing a conventional TEM and an atomic resolution high voltage transmission electron microscope (ARHVTEM).

GaN was grown on a patterned GaAs (001) substrate by the metalorganic vaporphase epitaxy (MOVPE) method using selective area growth (SAG) and epitaxial lateral overgrowth (ELO) process. The pattern mask was aligned along [110] direction of the GaAs (001) substrate. Cubic GaN (c-GaN) grew in the window of the patterned substrate. h-GaN was nucleated on the {111} plane of the c-GaN and grew in the lateral direction to fabricate a grain boundary in the halfway between two masks. The resulting symmetric tilt grain boundary was a Σ 9 CSL boundary. The boundary plane was in most cases parallel to the {3308} plane. Structural analysis revealed that the boundaries consist of ordinary 6-memebered rings and some 5-membered and 7-membered rings. Additionally, the expected atomic bonding angle deviates from the experimental findings. The different bonding angle was attributed to contributions of ionic bonding in GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 727: Symposium R – Nanostructured Interfaces , 2002 , R9.7
Copyright
Copyright © Materials Research Society 2002

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References

1. Nakamura, S., Senoh, M., Iwasa, N., Nagahama, S., Yamada, T. and Mukai, T., Jpn. J. Appl. Phys., 34, L1332 (1995).Google Scholar
2. Lester, S. D., Ponce, F.A., Craford, M. G., and Steigerwald, D. A., Appl. Phys. Lett., 66, 1249 (1995).Google Scholar
3. Sakai, A., Sunakawa, H., and Usui, A., Appl. Phys. Lett., 71, 2259 (1997).Google Scholar
4. Nagahama, S., Iwasa, N., Senoh, M., Matsushita, T., Sugimoto, Y., Kiyoku, H., Kosaki, T., Sano, M., Matsumura, H., Umemoto, H., Chocho, K., and Mukai, T., Jpn. J. Appl. Phys., 39, L647 (2000).Google Scholar
5. Sanorpim, S., Wu, J., Onabe, K., and Shiraki, Y., Ext. Abs. ICCG-13/ICVGE-11, Kyoto, July 30-August 4, 228 (2001).Google Scholar
6. Sanorpim, S., Takuma, E., Onabe, K., Ichinose, H., and Shiraki, Y., presented 4th ISBLLED, Cordoba, March (2002).Google Scholar
7. Sawada, H. and Ichinose, H., Scripta Mater., 44, 2327 (2001).Google Scholar
8. Ichinose, H. and Nakanose, M., Thin Solid Films, 319, 87 (1998).Google Scholar