Skip to main content
×
×
Home

Morphology and Step Coverage of In-Situ Doped Polysilicon Films Deposited by Single Wafer CVD

  • Jon T. Fitch (a1), Rama I. Hegde (a1), Israel Beinglass (a2) and Mali Venkatesan (a2)
Abstract

In-situ doped polysilicon films were deposited by single wafer low pressure chemical vapor deposition (LPCVD) over a temperature range of 590–640°C using SiH4 and dopant gases of B2H6, AsH3, and PH3. Deposition rate, sheet resistance, step coverage and surface roughness measurements of the films were made. The surface chemistry of these three in-situ doping processes is reviewed. Analysis shows how the physical properties of the deposited polysilicon films derive from the surface chemistry.

Copyright
References
Hide All
1. Learn, Arthur J. and Foster, Derrick W., J. Appl. Phys. 61(5), 1898 (1987).
2. Meyerson, B.S. and Ulbricht, W., J. Electrochem. Soc. 131(10), 2361 (1984).
3. Yu, Ming L., et.al., J. Appl. Phys. 59(12), 4032 (1986).
4. Hajjar, J-J.J. and Reif, Rafael, J. Electrochem. Soc. 137(9), 2888 (1990).
5. Comfort, James H. and Reif, Rafael, J. Appl. Phys. 65(3), 1053 (1989).
6. Maritan, C.M., et.al., J. Electrochem. Soc. 135(7), 1793 (1988).
7. Nakayama, S., et.al., J. Electrochem. Soc. 133(8), 1721 (1986).
8. Comfort, James H. and Reif, Rafael, J. Appl. Phys. 65(3), 1067 (1989).
9. Coronell, Daniel G. and Jensen, Klavs F., J. Electrochem. Soc. 141(9) 2545 (1994).
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 4 *
Loading metrics...

Abstract views

Total abstract views: 68 *
Loading metrics...

* Views captured on Cambridge Core between September 2016 - 27th May 2018. This data will be updated every 24 hours.