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Morphology and Step Coverage of In-Situ Doped Polysilicon Films Deposited by Single Wafer CVD

  • Jon T. Fitch (a1), Rama I. Hegde (a1), Israel Beinglass (a2) and Mali Venkatesan (a2)

In-situ doped polysilicon films were deposited by single wafer low pressure chemical vapor deposition (LPCVD) over a temperature range of 590–640°C using SiH4 and dopant gases of B2H6, AsH3, and PH3. Deposition rate, sheet resistance, step coverage and surface roughness measurements of the films were made. The surface chemistry of these three in-situ doping processes is reviewed. Analysis shows how the physical properties of the deposited polysilicon films derive from the surface chemistry.

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  • EISSN: 1946-4274
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