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Multi-layer contacts for organic light-emitting diodes with enhanced injection efficiency

Published online by Cambridge University Press:  15 March 2011

Ludmila Bakueva
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto, 10 King's College Rd., Toronto M5S 3G4, Canada
Sergei Musikhin
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto, 10 King's College Rd., Toronto M5S 3G4, Canada
Edward H. Sargent
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto, 10 King's College Rd., Toronto M5S 3G4, Canada
Alexander Shik
Affiliation:
Department of Electrical & Computer Engineering, University of Toronto, 10 King's College Rd., Toronto M5S 3G4, Canada
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Abstract

A low level of electron injection is one of the major obstacles to achieving high-efficiency organic light-emitting diodes. With the goal of improving injection characteristics, we fabricated and investigated herein multi-layer contacts which included a tunnel-transparent dielectric layer of nanometer thickness. Polymer layers were prepared by the spin-coating method and dielectric and metallic contact layers grown by vacuum deposition. The voltage drop at this layer shifts the metal Fermi level relative to the polymer molecular orbitals responsible for the carrier transport, increasing the injection efficiency. The introduction of a suitably chosen dielectric layer results in an increase in the injection efficiency by up to a factor of several tens.

Further sophistication of the injecting contacts consists in creating and additional intermediate thin metallic layer playing the role of the third, base electrode, similar to hot-electron transistors with metallic base. Additional bias applied to the base electrode permits variable injection efficiency and quantum yield over a wide range.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Parker, I. D. and Kim, H. H., Appl. Phys. Lett. 64, 1774 (1994).Google Scholar
2. Kim, Y.-E., Park, H., and Kim, J.-J., Appl.Phys. Lett. 69, 599 (1996).Google Scholar
3. Hung, L. S., Tang, C. W., and Mason, M. G., Appl. Phys. Lett. 70, 152 (1997).Google Scholar
4. Lindmayer, J., Proc. IEEE 52, 1751 (1964).Google Scholar
5. Yang, Y., Pei, Q., and Heeger, A. J., J. Appl. Phys. 79, 934 (1995).Google Scholar
6. Piromreun, P., Oh, H. S., Shen, Y., Malliaras, G. G., Scott, J. C., and Brock, P. J., Appl. Phys. Lett. 77, 2403 (2000).Google Scholar
7. Miyamoto, Y., Yamaguchi, A., Oshima, K., Saitoh, W., and Asada, M., J. Vacuum Sci. Technol. B 16, 851 (1998).Google Scholar