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A Multiple Quantum NMR (MQNMR) Study of Hydrogen Microstructure in Boron Doped a-Si:H

Published online by Cambridge University Press:  21 February 2011

S. Mitra ,
D. H. Levy ,
K. K. Gleason ,
H. Jia  and
J. Shinar
S. Mitra
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, MA 02139
D. H. Levy
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, MA 02139
K. K. Gleason
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, MA 02139
H. Jia
Affiliation:
Ames Laboratory - USDOE and Physics and Astronomy, Department, Iowa State University, IA 50011.
J. Shinar
Affiliation:
Ames Laboratory - USDOE and Physics and Astronomy, Department, Iowa State University, IA 50011.
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Abstract

An IR and multiple quantum NMR (MQNMR) study of hydrogen microstructure in three boron doped a-Si:H is discussed. The total Si-bonded H content of all films was 6.5 ± 1.0 at.% as determined by the 640 cm-1 IR wagging mode, but their boron content, which was determined by secondary ion mass spectrometry, ranged from 0.02 to 0.3 at. %. The number of correlated hydrogen, as measured at a preparation time of 600 μSwas found to be more weakly dependent on the boron content than previously observed in phosphorous-doped glow-discharge films. Upon annealing at 220 °C the MQNMR spectrum show a moderate increase in the number of correlated hydrogen in all three samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 269
Copyright
Copyright © Materials Research Society 1992

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References

LIST OF REFERENCES

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