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Multiple-Scan E-Beam Method Applied to a Range of Semiconducting Materials

Published online by Cambridge University Press:  15 February 2011

N.J. Shah ,
R.A. Mcmahon ,
J.G.S. Williams  and
H. Ahmed
N.J. Shah
Affiliation:
Engineering Department, Cambridge University, Trumpington Street, Cambridge CB2 1PZ, England
R.A. Mcmahon
Affiliation:
Engineering Department, Cambridge University, Trumpington Street, Cambridge CB2 1PZ, England
J.G.S. Williams
Affiliation:
Engineering Department, Cambridge University, Trumpington Street, Cambridge CB2 1PZ, England
H. Ahmed
Affiliation:
Engineering Department, Cambridge University, Trumpington Street, Cambridge CB2 1PZ, England
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Abstract

This paper describes the conditions for activating ion implants in a range of semiconductor materials in the solid state. This includes phosphorus and arsenic implants into silicon, boron and phosphorus implants into SOS, gallium into germanium and silicon into gallium arsenide. For each material the restoration of electrical activity correlates with structural data from RBS analysis. Negligible implant diffusion occurs for the typical annealing treatments which result in full activation of dopants.

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References

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