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Nanocrystal Growth in Crystalline Insulators Irradiated with High-Current Cu IONs

Published online by Cambridge University Press:  15 February 2011

N. Kishimoto ,
N. Umeda ,
Y. Takeda ,
C.G. Lee  and
V.T. Gritsyna
N. Kishimoto
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan, kishin@nrim.go.jp
N. Umeda
Affiliation:
Tsukuba University, 1-1 Ten-nodai, Tsukuba, Ibaraki 305-0006, Japan
Y. Takeda
Affiliation:
Kharkov State University, Kharkov 310077, Ukraine
C.G. Lee
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan, kishin@nrim.go.jp
V.T. Gritsyna
Affiliation:
Kharkov State University, Kharkov 310077, Ukraine
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Abstract

Negative Cu ions of 60 keV have been applied to generate metal nanocrystals embedded in insulators. Crystalline (c-), amorphous (a-)SiO2 and a spinel oxide, MgO·2(Al2O3), were irradiated at various dose rates up to about 100 µA/cm2, at a total dose of 3.O×1016 ions/cm2. In a-Sio2, morphology of nanoparticles and the resultant optical property changed with dose rate and, at a critical condition, showed in-plane arrangement of nanocrystals. The optical property of c-Si0 2 (a-quartz) was qualitatively similar to that of a-SiO2, but the implanted region of c-SiO2 showed different irradiation responses. The c-SiO2 was susceptible to radiation-induced amorphization but the nanoparticle morphology was still different from a-SiO2, suggesting a stronger depth-oriented driving force. Unlike SiO2, the spinel oxide showed good structural stability against the implantation and no tendency of the long-range atomic rearrangement. The results indicate that the crystallinity and the relevant interactions may play an important role in the nanoparticle growth during the implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 153
Copyright
Copyright © Materials Research Society 1999

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