Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-23T16:10:41.591Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanocrystalline-Si Thin Film Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) at 150°C

Published online by Cambridge University Press:  01 February 2011

Sang-Myeon Han ,
Joong-Hyun Park ,
Hye-Jin Lee ,
Kwang-Sub Shin  and
Min-Koo Han
Sang-Myeon Han
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-871-7992, E-mail: mkh@snu.ac.kr
Joong-Hyun Park
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-871-7992, E-mail: mkh@snu.ac.kr
Hye-Jin Lee
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-871-7992, E-mail: mkh@snu.ac.kr
Kwang-Sub Shin
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-871-7992, E-mail: mkh@snu.ac.kr
Min-Koo Han
Affiliation:
School of Electrical Engineering (#50), Seoul National University, Seoul, 151-742, Korea Phone: +82-2-880-7992, Fax: +82-2-871-7992, E-mail: mkh@snu.ac.kr
Get access

Abstract

Nanocrystalline silicon (nc-Si) films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150°C. ICP power was 400W. The process gas was SiH4 diluted with He as well as H2. The flow rate of He, H2 and He/H2 mixture was varied from 20sccm to 60sccm and that of SiH4 was 3sccm. X-ray diffraction (XRD) patterns of the nc-Si films were measured. From the XRD results of nc-Si films deposited by ICP-CVD, the properties of Si film deposited under each condition were studied. As the dilution ratio increases and He/H2 mixture was used as a dilution gas, intensities of <111>and<220> peaks were increased and the incubation layer was thin. These results were explained in the point of role of H2 plasma and He plasma in the nc-Si deposition process. Our experimental results show that nc-Si film deposited by ICP-CVD may be suitable for an active layer of nc-Si TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A19.9
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Goto, Masashi, et al, Jpn. J. Appl. Phys. Vol.36, pp.3714–3720 (1997).10.1143/JJAP.36.3714Google Scholar
2 Hopwood, J., Plasma Sources Sci. Technol. 862, 109 (1992).10.1088/0963-0252/1/2/006Google Scholar
3 Keller, J. H., Plasma Sources Sci. Technol. 5, 166 (1996).10.1088/0963-0252/5/2/008Google Scholar
4 Kondo, Michio, et al, Thin Solid Films, 430, pp.130–134 (2003).10.1016/S0040-6090(03)00093-2Google Scholar
5 Kakinuma, H., et al, J. Appl. Phys., Vol. 70 (12), pp.7374–7381 (1991).10.1063/1.349732Google Scholar
6 Bisaro, R., et al, J. Appl. Phys., Vol. 59 (4), pp.1167–1178 (1986).10.1063/1.336554Google Scholar
7 Han, S. M., et al, Proceedings of the IDW, pp.505–506 (2004).Google Scholar
8 Knights, J. C. and Lujan, R. A., Appl. Phys. Lett., Vol. 35, 244 (1979).10.1063/1.91086Google Scholar
9 Nomoto, K., et al, Jpn. J. Appl. Phys., Vol. 29, 1372 (1990).10.1143/JJAP.29.L1372Google Scholar
10 Veprek, S., J. Chem, Phys., Vol. 56, 952 (1972).10.1063/1.1678345Google Scholar
11 Otobe, M., et al, Jpn. J. Appl. Phys., Vol. 31, 533 (1992).10.1143/JJAP.31.1948Google Scholar
12 Shibata, N., et al, Mat. Res. Soc. Symp. Proc., Vol. 64, 1024 (1994).Google Scholar
13 Vossen, John L., Kern, Werner, “Thin Film Processes II, Academic Press (1991).Google Scholar
14 Mukherjee, C., et al, J. Vac. Sci. Technol., A 17(6), pp. 3202–3208 (1999).10.1116/1.582043Google Scholar