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Nanoscale Control of Ferroelectric Domain Structure by AFM

Published online by Cambridge University Press:  15 February 2011

A. Gruverman ,
O. Kolosov ,
J. Hatano ,
K. Takahashi  and
H. Tokumoto
A. Gruverman
Affiliation:
National Institute for Research in Inorganic Materials, Tsukuba, Ibaraki 305, Japan
O. Kolosov
Affiliation:
JRCAT-ATP, Tsukuba, Ibaraki 305, Japan
J. Hatano
Affiliation:
Science University of Tokyo, Noda, Chiba 278, Japan
K. Takahashi
Affiliation:
National Institute for Research in Inorganic Materials, Tsukuba, Ibaraki 305, Japan
H. Tokumoto
Affiliation:
JRCAT-NAIR, Tsukuba, Ibaraki 305, Japan
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Abstract

An atomic force microscope is used for visualization and control of domain structure in the ferroelectric crystal guanidinium aluminum sulfate hexahydrate (GASH). Large built-in domains are delineated due to the tip-sample electrostatic interaction by the force microscope operating in friction mode. It is found that an applied voltage of a particular sign created new domains whereas a potential of opposite sign erased these domains. Domains created by an external electric field are visualised in topography mode due to piezoelectric deformation of the crystal. The dynamics of domain lateral growth has been directly observed with nanoscale resolution.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 357: Symposium C – Structure and Properties of Interfaces in Ceramics , 1994 , 363
Copyright
Copyright © Materials Research Society 1995

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