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Nanoscale Measurements in Organic Memory Devices from C60 in Insulating Polymers

Published online by Cambridge University Press:  26 February 2011

Alokik Kanwal  and
Manish Chhowalla
Alokik Kanwal
Affiliation:
alokik@eden.rutgers.edu, Rutgers University, Materials Science and Engineering, 607 Taylor Rd, Piscataway, NJ, 08854, United States, 732-445-4527
Manish Chhowalla
Affiliation:
manish1@rci.rutgers.edu, Rutgers University, Materials Science and Engineering, United States
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Abstract

Following our pervious works demonstrating all-organic memory devices based on a nanocomposite material consisting of C60 molecules dispersed in an insulating polymer. In this paper, we will report on conducting atomic force microscopy (c-AFM) measurements from nanosized regions on memory devices. The c-AFM nanoscale measurements show a hysteresis of high and low conductance states, in agreement with our previous reports on macroscopic memory devices. The c-AFM measurements were verified by 30nm gap cell devices fabricated via e-beam lithography, which also showed similar current values. Analysis of our data reveals that the conduction mechanism switches from direct tunneling to Fowler-Nordheim tunneling above a threshold voltage.

Keywords

organicmemorynanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 905: Symposium DD – Materials for Transparent Electronics , 2005 , 0905-DD06-03
Copyright
Copyright © Materials Research Society 2006

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References

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