Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-25T02:13:33.033Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanostructured Arrays Formed by Finely Focused Ion Beams

Published online by Cambridge University Press:  09 August 2011

R. A. Zuhr ,
J. D. Budai ,
P. G. Datskos ,
A. Meldrum ,
K. A. Thomas ,
R. J. Warmack ,
C. W. White ,
L. C. Feldman ,
M. Strobel  and
K. -H. Heinig
R. A. Zuhr
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
P. G. Datskos
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
A. Meldrum
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
K. A. Thomas
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
R. J. Warmack
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
L. C. Feldman
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831 Vanderbilt University, Nashville, TN 37235
M. Strobel
Affiliation:
Research Center Rossendorf, D-01314 Dresden, Germany
K. -H. Heinig
Affiliation:
Research Center Rossendorf, D-01314 Dresden, Germany
Get access

Abstract

Amorphous, polycrystalline, and single crystal nanometer dimension particles can be formed in a variety of substrates by ion implantation and subsequent annealing. Such composite colloidal materials exhibit unique optical properties that could be useful in optical devices, switches, and waveguides. However colloids formed by blanket implantation are not uniform in size due to the nonuniform density of the implant, resulting in diminution of the size dependent optical properties. The object of the present work is to form more uniform size particles arranged in a 2-dimensional lattice by using a finely focused ion beam to implant identical ion doses only into nanometer size regions located at each point of a rectangular lattice. Initial work is being done with a 30 keV Ga beam implanted into Si. Results of particle formation as a function of implant conditions as analyzed by Rutherford backscattering, x-ray analysis, atomic force microscopy, and both scanning and transmission electron microscopy will be presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 251
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Arnold, G. W., Borders, J. A., J. Appl. Phys. 489, p. 1488 (1977).Google Scholar
2. White, C. W., et al., “Encapsulated Nanocrystals and Quantum Dots Formed by Ion Beam Synthesis,” Nucl. Instrum. Meth. Phys. Res. B 127/128, p. 545 (1997).Google Scholar
3. Zuhr, R. A. and Magruder, R. H., III, “Optical Properties of Multi-Component Metallic Nanoclusters Formed in Silica by Sequential Ion Implantation,” invited paper, Journal of the Surface Science Society of Japan 18, #5, p. 269 (1997).Google Scholar
4. Strobel, M., Heinig, K. -H., Moller, W., Meldrum, A., Zhou, D. S., White, C. W., and Zuhr, R. A., “Ion Beam Synthesis of Gold Nanoclusters in SiO2: Computer Simulations Versus Experiments,” Nucl. Instrum. Meth. Phys. Res. B, to be published.Google Scholar
5. Sputtering by Particle Bombardment, ed. by Behrisch, R., Springer-Verlag, Berlin, (1981), p. 169.Google Scholar
6. The Profile Code is a product of Implant Sciences Corporation, Wakefield, MA.Google Scholar