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The Nature of Native Defects in LEC grown Semi-Insulating GaAs by Thermally Stimulated Current Spectroscopy

Published online by Cambridge University Press:  25 February 2011

Zhaoqiang Fang ,
Lei Shan ,
T. E. Schlesinger  and
A. G. Milnes
Zhaoqiang Fang
Affiliation:
Department of Electrical and Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213
Lei Shan
Affiliation:
Department of Electrical and Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213
T. E. Schlesinger
Affiliation:
Department of Electrical and Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213
A. G. Milnes
Affiliation:
Department of Electrical and Computer Engineering Carnegie Mellon University, Pittsburgh, PA 15213
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Abstract

Traps have been studied by thermally stimulated current spectroscopy (TSC) with intrinsic (1.96 eV) and extrinsic (1.15 eV) light for both In doped and undoped LEC materials grown under various non-stoichiometric conditions. Significant differences are seen in the bulk trap spectra associated with Ga-rich and As-rich material and with isoelectronic In doping. Proximity wafer-annealing at 950° C has been shown to improve minority carrier lifetime in n-type GaAs and we show that in semi-insulating GaAs this causes changes in trap structure. From such thermal studies and the effects of non-stoichiometric growth, the probable nature of the traps commonly seen is inferred.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 189
Copyright
Copyright © Materials Research Society 1990

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References

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