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N-Channel Mos Transistors below 0.5 μm with Ultra-Shallow Channels formed by Low Temperature Selective Silicon Epitaxy

Published online by Cambridge University Press:  15 February 2011

P. L. Huang ,
K. Seastrand ,
K. E. Violette ,
J. Wolf  and
M. C. Öztürk
P. L. Huang
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University Box 7911, Raleigh, NC 27695–7911, USA
K. Seastrand
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University Box 7911, Raleigh, NC 27695–7911, USA
K. E. Violette
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University Box 7911, Raleigh, NC 27695–7911, USA
J. Wolf
Affiliation:
Department of Materials Science and Engineering, North Carolina State University Box 7907, Raleigh, NC 27695–7907, USA
M. C. Öztürk
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University Box 7911, Raleigh, NC 27695–7911, USA
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Abstract

In this paper, we present an application of ultra high Vacuum Rapid Thermal Chemical Vapor Deposition (UHV-RTCVD) to MOSFET channel engineering. MOSFETs were fabricated on ultra-thin (200 Å), moderately doped (l×1017 - 6×1018 cm−3) p-type epitaxial layers selectively grown in active areas defined by standard LOCOS isolation. The selective epitaxy was achieved using a novel Si2H6Cl2/B2H6 process at 800°C and at a total pressure under 30 mtorr. Low thermal budget processing techniques were emphasized to minimize spread in the channel doping profile. Threshold voltages below 0.6 V were obtained. Transistors with effective channel lengths of 0.45 μm exhibit subthreshold slopes from 78 to 92 mV/decade determined by the epitaxial channel doping density. We have found that by using ultra-thin channels, expected transconductance degradation at high channel doping densities can be minimized. Furthermore, ultra-thin channels help reduce the sensitivity of the threshold voltage on substrate bias. The results show that low temperature selective silicon epitaxy can be used to form ultra-shallow channel doping profiles that can enhance the performance of MOSFETs in the deep submicron regime.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 347
Copyright
Copyright © Materials Research Society 1995

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References

1. Miyake, M., Kobayashi, T., and Okazaki, Y., IEEE Transactions on Electron Devices, 37, 2007, (1990).Google Scholar
2. Yoshitomi, T., Saito, M., Oguma, H., Akasaka, Y., Ono, M., Nii, H., Ushiku, Y., Iwai, H., and Hara, H., Symp. on VLSI Tech., 1993, 99.Google Scholar
3. Öztürk, M. C., Celik, S. M., Ban, I., Harris, G., Sanganeria, M. K., Violette, K. E., Lee, A., Mat. Res. Soc. Symp. Proc. 342, 43, (1994).Google Scholar
4. Celik, S. M., Sanganeria, M. K., Violette, K. E., and Öztürk, M. C., Proceedings of 1993 inter. Semi. Device Research Symposium, 1993, 287.Google Scholar
5. Hori, A., Hirai, T., Tanaka, M., Nakaoka, H., Umimoto, H., and Yasuhira, M., IEDM Tech. Dig., 1993, 909.Google Scholar
6. Fiegna, C., Iwai, H., Wada, T., Saito, M., Sangiorgi, E., and Ricco, B., IEEE Transactions on Electron Devices, 41, 941, 1994.Google Scholar
7. Violette, K. E., Öztürk, M C. and O'neil, P., presented at the 1995 MRS Spring Meeting, San Francisco, CA, 1995 (unpublished).Google Scholar
8. Sanganeria, M. K., Violette, K. E., Öztürk, M. C., Harris, G, and Maher, D. M., J. Electrochem. Soc., 142, 285 (1995).Google Scholar
9. Tsividis, Y. P., Operation and Modeling of the MOS Transistor (McGraw-Hill, New York, 1988), p. 224.Google Scholar