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Near-infrared Ge Photodetectors Fabricated on Si Substrates with CMOS Technology
Published online by Cambridge University Press: 10 February 2011
Abstract
We have fabricated the first CMOS process compatible high-responsivity Ge p-i-n diodes for 1.55 μm wavelengths. The thermal expansion mismatch between Ge epilayers and Si substrates was used to engineer tensile strain upon cooling from the growth temperature. This 0.2% tensile strain results in a lowering of the direct transition energy in Ge by 30 meV and extends the responsivity curve to near 1.6μm.
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- Copyright © Materials Research Society 2003