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Near-Infrared Photodetection with Molecular Beam Epitaxy Grown Extended InGaAs

  • Jun-Xian Fu (a1), Xiaojun Yu, Yu-Hsuan Kuo and James S Harris
Abstract
Abstract

Strain-balanced InxGa1-xAs/InyGa1-yAs superlattices and fractional monolayer In0.532Ga0.468As/InAs superlattices were grown by solid-source molecular beam epitaxy (SSMBE) in order to extend the photodetection wavelength range beyond 1.7μm. Material qualities were characterized by transmitted electron microscope (TEM), X-ray diffraction (XRD), roomtemperature photoluminesecence (RTPL) and optical absorption measurement.

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