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A New Approach of Thin-Film X-Ray Diffraction / Scattering Analysis for Ultra-Low-k Dielectrics with Periodic Pore Structures

Published online by Cambridge University Press:  01 February 2011

N. Hata ,
Y. Oku ,
K. Yamada  and
T. Kikkawa
N. Hata
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan
Y. Oku
Affiliation:
MIRAI Project, Association of Super-Advanced Electronics Technology, AIST Tsukuba, Ibaraki, Japan
K. Yamada
Affiliation:
MIRAI Project, Association of Super-Advanced Electronics Technology, AIST Tsukuba, Ibaraki, Japan
T. Kikkawa
Affiliation:
MIRAI Project, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan Research Center for Nanodevices and Systems, Hiroshima University, Higashi-Hiroshima, Hiroshima, Japan
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Abstract

We propose and demonstrate experimentally a structural characterization technique for ultra-low-dielectric-constant thin films with periodic porous structures [1-3] by employing X-ray diffraction / scattering measurements. The analytical approach that we propose here takes into account specular reflection, incoherent scattering from random distribution of electron density, and coherent scattering from periodically modulated distribution of electron density. From the analysis, inter-pore distances and pore diameters in the directions perpendicular and parallel to the film surface are determined with which the film porosity is calculated. Thus obtained porosity is then used to discuss the film density and dielectric constant in comparison to those of non-porous reference sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B12.5
Copyright
Copyright © Materials Research Society 2002

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